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139

SAM7S Series [DATASHEET]

6175M–ATARM–26-Oct-12

20.3.4.1

Flash Read Command

This command is used to read the Flash contents. The memory map is accessible through this command. Memory

is seen as an array of words (32-bit wide). The read command can start at any valid address in the memory plane.

This address must be word-aligned. The address is automatically incremented.

20.3.4.2

Flash Write Command

This command is used to write the Flash contents. The address transmitted must be a valid Flash address in the

memory plane.

The Flash memory plane is organized into several pages. Data to be written is stored in a load buffer that corre-

sponds to a Flash memory page. The load buffer is automatically flushed to the Flash:

before access to any page than the current one

at the end of the number of words transmitted

The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be chained; an inter-

nal address buffer is automatically increased.

Flash Write Page and Lock command (WPL) is equivalent to the Flash Write Command. However, the lock bit is

automatically set at the end of the Flash write operation. As a lock region is composed of several pages, the pro-

grammer writes to the first pages of the lock region using Flash write commands and writes to the last page of the

lock region using a Flash write and lock command.

Flash Erase Page and Write command (EWP) is equivalent to the Flash Write Command. However, before pro-

gramming the load buffer, the page is erased.

Flash Erase Page and Write the Lock command (EWPL) combines EWP and WPL commands.

20.3.4.3

Flash Full Erase Command

This command is used to erase the Flash memory planes.

Table 20-22. Read Command

Read/Write

DR Data

Write

(Number of Words to Read) << 16 | READ

Write

Address

Read

Memory [address]

Read

Memory [address+4]

...

Read

Memory [address+(Number of Words to Read - 1)* 4]

Table 20-23. Write Command

Read/Write

DR Data

Write

(Number of Words to Write) << 16 | (WP or WPL or EWP or EWPL)

Write

Address

Write

Memory [address]

Write

Memory [address+4]

Write

Memory [address+8]

Write

Memory [address+(Number of Words to Write - 1)* 4]

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